FDV302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

9 ns

Width :

1.3mm

FET Type :

P-Channel

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Weight :

30mg

Nominal Vgs :

-1 V

Pbfree Code :

yes

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

8 ns

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Mounting Type :

Surface Mount

Rise Time :

8ns

Power Dissipation-Max :

350mW Ta

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Number of Pins :

3

Published :

1997

Continuous Drain Current (ID) :

120mA

Resistance :

13Ohm

Power Dissipation :

350mW

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Voltage - Rated DC :

-25V

Vgs (Max) :

±8V

Height :

1.11mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Voltage (Vdss) :

25V

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-120mA

Element Configuration :

Single

JESD-609 Code :

e3

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

5 ns

Gate to Source Voltage (Vgs) :

-8V

Drain to Source Breakdown Voltage :

-25V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-1V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Terminal Form :

Gull wing

Length :

2.92mm

Radiation Hardening :

No

Dual Supply Voltage :

-25V