FDV302P
- Mfr.Part #
- FDV302P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 25V 120MA SOT23
- Stock
- 18,122
- In Stock :
- 18,122
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 9 ns
- Width :
- 1.3mm
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Weight :
- 30mg
- Nominal Vgs :
- -1 V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 8 ns
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Rise Time :
- 8ns
- Power Dissipation-Max :
- 350mW Ta
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 150°C
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Published :
- 1997
- Continuous Drain Current (ID) :
- 120mA
- Resistance :
- 13Ohm
- Power Dissipation :
- 350mW
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 0.31nC @ 4.5V
- Voltage - Rated DC :
- -25V
- Vgs (Max) :
- ±8V
- Height :
- 1.11mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) :
- 25V
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 200mA, 4.5V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -120mA
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 11pF @ 10V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Turn On Delay Time :
- 5 ns
- Gate to Source Voltage (Vgs) :
- -8V
- Drain to Source Breakdown Voltage :
- -25V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- -1V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Ta
- Terminal Form :
- Gull wing
- Length :
- 2.92mm
- Radiation Hardening :
- No
- Dual Supply Voltage :
- -25V
- Datasheets
- FDV302P
FDV302P Documents

P-Channel Tape & Reel (TR) 10 Ω @ 200mA, 4.5V ±8V 11pF @ 10V 0.31nC @ 4.5V 25V TO-236-3, SC-59, SOT-23-3
FDV302P Description
Our exclusive high cell density DMOS technology is used to make the FDV302P transistor. This extremely dense technique is specifically designed to reduce on-state resistance. This device was created specifically to replace digital transistors in low-voltage applications. This single P-channel FET can replace numerous digital transistors with various bias resistors, such as the DTCx and DCDx series, because bias resistors are not required.
FDV302P Features
-
Gate drive needs are very minimal, allowing direct operation in 3V circuits. VGS(th) < 1.5V.
-
For ESD toughness, use a Gate-Source Zener.
-
Human Body Model >6kV
-
SOT-23 surface mount package is a compact industry standard.
-
One DMOS FET can replace multiple PNP digital transistors (DTCx and DCDx).
FDV302P Applications
FDV302P is intended for general use and can be used in a variety of situations.
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDV301N | onsemi | 32,350 | MOSFET N-CH 25V 220MA SOT23 |
| FDV301N-F169 | onsemi | 14,014 | MOSFET N-CH 25V 220MA SOT23 |
| FDV301N_D87Z | onsemi | 13,770 | MOSFET N-CH 25V 220MA SOT23 |
| FDV302P | onsemi | 47,478 | SMALL SIGNAL FIELD-EFFECT TRANSI |
| FDV302P_D87Z | onsemi | 10,535 | MOSFET P-CH 25V 120MA SOT23 |
| FDV303N | onsemi | 33,065 | MOSFET N-CH 25V 680MA SOT23 |
| FDV303N-F169 | onsemi | 3,899 | MOSFET N-CH 25V 680MA SOT23 |
| FDV303N_NB9U008 | onsemi | 23,497 | MOSFET N-CH 25V 680MA SOT-23 |
| FDV304P | onsemi | 16,516 | MOSFET P-CH 25V 460MA SOT23 |
| FDV304P-CGB8 | onsemi | 8,944 | MOSFET P-CHANNEL |
| FDV304P-D87Z | onsemi | 19,615 | MOSFET P-CH 25V 460MA SOT23 |
| FDV304P-F169 | onsemi | 2,516 | P-CHANNEL DIGITAL FET |
| FDV304P_NB8U003 | onsemi | 7,290 | MOSFET P-CH 25V 460MA SOT-23 |
| FDV305N | onsemi | 303,945 | MOSFET N-CH 20V 900MA SOT23 |
| FDV305N | onsemi | 303,945 | SMALL SIGNAL FIELD-EFFECT TRANSI |
















