FDV302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Number of Pins :

3

Factory Lead Time :

10 Weeks

Power Dissipation :

350mW

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Radiation Hardening :

No

Continuous Drain Current (ID) :

120mA

Power Dissipation-Max :

350mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.11mm

FET Type :

P-Channel

Turn-Off Delay Time :

9 ns

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Length :

2.92mm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

1

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Dual Supply Voltage :

-25V

Fall Time (Typ) :

8 ns

Current Rating :

-120mA

Voltage - Rated DC :

-25V

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Rise Time :

8ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Threshold Voltage :

-1V

Drain to Source Voltage (Vdss) :

25V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Contact Plating :

Tin

Additional Feature :

LOGIC LEVEL COMPATIBLE

Weight :

30mg

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Gate to Source Voltage (Vgs) :

-8V

Resistance :

13Ohm

REACH SVHC :

No SVHC

Terminal Position :

Dual

Element Configuration :

Single

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Nominal Vgs :

-1 V

Drain to Source Breakdown Voltage :

-25V

Width :

1.3mm

Turn On Delay Time :

5 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

Pbfree Code :

yes