FDV302P
- Mfr.Part #
- FDV302P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 25V 120MA SOT23
- Stock
- 18,122
- In Stock :
- 18,122
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 1997
- Number of Pins :
- 3
- Factory Lead Time :
- 10 Weeks
- Power Dissipation :
- 350mW
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 120mA
- Power Dissipation-Max :
- 350mW Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.11mm
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 9 ns
- Vgs (Max) :
- ±8V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.92mm
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Ta
- Dual Supply Voltage :
- -25V
- Fall Time (Typ) :
- 8 ns
- Current Rating :
- -120mA
- Voltage - Rated DC :
- -25V
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Rise Time :
- 8ns
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Threshold Voltage :
- -1V
- Drain to Source Voltage (Vdss) :
- 25V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Contact Plating :
- Tin
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Weight :
- 30mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 11pF @ 10V
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 0.31nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- -8V
- Resistance :
- 13Ohm
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- -1 V
- Drain to Source Breakdown Voltage :
- -25V
- Width :
- 1.3mm
- Turn On Delay Time :
- 5 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 200mA, 4.5V
- Pbfree Code :
- yes
- Datasheets
- FDV302P
FDV302P Documents

P-Channel Tape & Reel (TR) 10 Ω @ 200mA, 4.5V ±8V 11pF @ 10V 0.31nC @ 4.5V 25V TO-236-3, SC-59, SOT-23-3
FDV302P Description
Our exclusive high cell density DMOS technology is used to make the FDV302P transistor. This extremely dense technique is specifically designed to reduce on-state resistance. This device was created specifically to replace digital transistors in low-voltage applications. This single P-channel FET can replace numerous digital transistors with various bias resistors, such as the DTCx and DCDx series, because bias resistors are not required.
FDV302P Features
-
Gate drive needs are very minimal, allowing direct operation in 3V circuits. VGS(th) < 1.5V.
-
For ESD toughness, use a Gate-Source Zener.
-
Human Body Model >6kV
-
SOT-23 surface mount package is a compact industry standard.
-
One DMOS FET can replace multiple PNP digital transistors (DTCx and DCDx).
FDV302P Applications
FDV302P is intended for general use and can be used in a variety of situations.
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