FDV302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

25V

Dual Supply Voltage :

-25V

Power Dissipation :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn-Off Delay Time :

9 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-25V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Length :

2.92mm

Weight :

30mg

Mount :

Surface Mount

FET Type :

P-Channel

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

Turn On Delay Time :

5 ns

Resistance :

13Ohm

Drain to Source Breakdown Voltage :

-25V

Number of Channels :

1

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

Max Junction Temperature (Tj) :

150°C

Height :

1.11mm

Element Configuration :

Single

ECCN Code :

EAR99

Fall Time (Typ) :

8 ns

Published :

1997

Rise Time :

8ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

350mW Ta

Number of Pins :

3

Nominal Vgs :

-1 V

Current Rating :

-120mA

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

-8V

Continuous Drain Current (ID) :

120mA

Radiation Hardening :

No

Lead Free :

Lead Free

Threshold Voltage :

-1V

Pbfree Code :

yes

Width :

1.3mm