FDV304P
- Mfr.Part #
- FDV304P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 25V 460MA SOT23
- Stock
- 16,516
- In Stock :
- 16,516
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Current :
- 46A
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 8ns
- Number of Channels :
- 1
- Current Rating :
- -460mA
- Nominal Vgs :
- -860 mV
- Dual Supply Voltage :
- -25V
- Power Dissipation :
- 350mW
- Drain to Source Breakdown Voltage :
- -25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 63pF @ 10V
- Max Junction Temperature (Tj) :
- 150°C
- Factory Lead Time :
- 10 Weeks
- Length :
- 2.92mm
- Termination :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 460mA Ta
- Transistor Application :
- SWITCHING
- Voltage :
- 25V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Power Dissipation-Max :
- 350mW Ta
- Pbfree Code :
- yes
- Published :
- 1997
- Threshold Voltage :
- -860mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID) :
- 460mA
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Turn On Delay Time :
- 7 ns
- Vgs (Max) :
- ±8V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -25V
- FET Type :
- P-Channel
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.11mm
- Gate to Source Voltage (Vgs) :
- -8V
- Resistance :
- 1.5Ohm
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 500mA, 4.5V
- Turn-Off Delay Time :
- 55 ns
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Datasheets
- FDV304P
FDV304P Documents

P-Channel Tape & Reel (TR) 1.1 Ω @ 500mA, 4.5V ±8V 63pF @ 10V 1.5nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDV304P Description
This P-Channel enhancement mode field effect transistors is produced using ON Semiconductor's proprietary, high cell
density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive
conditions. This device is designed especially for application in battery power applications such as notebook computers
and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
FDV304P Features
-25 V, -0.46 A continuous, -1.5 A Peak.
RDS(ON) = 1.1 W @ VGS = -4.5 V
RDS(ON) = 1.5 W @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
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