FDV301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

25V

Rise Time :

6ns

Turn-Off Delay Time :

3.5 ns

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Fall Time (Typ) :

6 ns

Terminal Position :

Dual

Current :

2A

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Dual Supply Voltage :

25V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Width :

3.05mm

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

220mA Ta

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Current Rating :

220mA

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Number of Terminations :

3

Mount :

Surface Mount

REACH SVHC :

No SVHC

FET Type :

N-Channel

Resistance :

4Ohm

Continuous Drain Current (ID) :

220mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

350mW Ta

Turn On Delay Time :

3.2 ns

Voltage - Rated DC :

25V

Vgs(th) (Max) @ Id :

1.06V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Length :

2.92mm

Height :

1.11mm

Vgs (Max) :

±8V

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Contact Plating :

Tin

Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Nominal Vgs :

850 mV

Manufacturer Package Identifier :

SOT−23 (TO−236) CASE 318−08 ISSUE AR

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

350mW

Number of Channels :

1

Number of Pins :

3

RoHS Status :

ROHS3 Compliant