FDV303N

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Mfr.Part #
FDV303N
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 25V 680MA SOT23
Stock
33,065
In Stock :
33,065

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
1.11mm
Length :
2.92mm
Package / Case :
TO-236-3, SC-59, SOT-23-3
Voltage :
20V
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Width :
3.05mm
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
680mA
Max Junction Temperature (Tj) :
150°C
Gate to Source Voltage (Vgs) :
8V
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 16 hours ago)
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
2.3nC @ 4.5V
Fall Time (Typ) :
8.5 ns
Threshold Voltage :
800mV
Drain to Source Breakdown Voltage :
25V
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
450m Ω @ 500mA, 4.5V
Radiation Hardening :
No
Contact Plating :
Tin
Drive Voltage (Max Rds On,Min Rds On) :
2.7V 4.5V
Resistance :
450mOhm
Turn On Delay Time :
3 ns
Turn-Off Delay Time :
17 ns
Voltage - Rated DC :
25V
FET Type :
N-Channel
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
680mA Ta
Mount :
Surface Mount
Power Dissipation-Max :
350mW Ta
JESD-609 Code :
e3
Number of Terminations :
3
Number of Pins :
3
Terminal Finish :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current :
12A
Number of Elements :
1
Current Rating :
680mA
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Rise Time :
8.5ns
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Factory Lead Time :
10 Weeks
Vgs (Max) :
±8V
Transistor Element Material :
SILICON
Nominal Vgs :
800 mV
ECCN Code :
EAR99
Termination :
SMD/SMT
REACH SVHC :
No SVHC
Published :
1997
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 10V
Power Dissipation :
350mW
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Dual Supply Voltage :
25V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDV303N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Voltage:20V, Number of Channels:1, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDV303N pinout, FDV303N datasheet PDF, FDV303N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDV303N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDV303N


N-Channel Tape & Reel (TR) 450m Ω @ 500mA, 4.5V ±8V 50pF @ 10V 2.3nC @ 4.5V TO-236-3, SC-59, SOT-23-3

FDV303N Description

 

FDV303N N-Channel MOSFET is using a proprietary, high cell density. FDV303N datasheet can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDV303N ON Semiconductor is used in high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.

 

 

FDV303N Features

 

RoHS Compliant

Very low-level gate drive

Silicon combination

Advanced Package

Gate-Source Zener

 

 

FDV303N Applications

 

High-efficiency miniature

DC/DC conversion

Cellular phones

Pagers

 


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