FDV303N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.11mm

Length :

2.92mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage :

20V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Width :

3.05mm

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

680mA

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Fall Time (Typ) :

8.5 ns

Threshold Voltage :

800mV

Drain to Source Breakdown Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Radiation Hardening :

No

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Resistance :

450mOhm

Turn On Delay Time :

3 ns

Turn-Off Delay Time :

17 ns

Voltage - Rated DC :

25V

FET Type :

N-Channel

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

680mA Ta

Mount :

Surface Mount

Power Dissipation-Max :

350mW Ta

JESD-609 Code :

e3

Number of Terminations :

3

Number of Pins :

3

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current :

12A

Number of Elements :

1

Current Rating :

680mA

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rise Time :

8.5ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Vgs (Max) :

±8V

Transistor Element Material :

SILICON

Nominal Vgs :

800 mV

ECCN Code :

EAR99

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Power Dissipation :

350mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Dual Supply Voltage :

25V