FDV303N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current :

12A

Current Rating :

680mA

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Power Dissipation-Max :

350mW Ta

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Channels :

1

Voltage :

20V

Pbfree Code :

yes

Lead Free :

Lead Free

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Dual Supply Voltage :

25V

Fall Time (Typ) :

8.5 ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

25V

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

680mA Ta

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

25V

Turn-Off Delay Time :

17 ns

Power Dissipation :

350mW

Published :

1997

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Continuous Drain Current (ID) :

680mA

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Finish :

Tin

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

800 mV

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Number of Elements :

1

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Resistance :

450mOhm

Length :

2.92mm

ECCN Code :

EAR99

Turn On Delay Time :

3 ns

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Height :

1.11mm

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Rise Time :

8.5ns

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Threshold Voltage :

800mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Width :

3.05mm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ