FDV303N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

680mA

Number of Pins :

3

Length :

2.92mm

Factory Lead Time :

10 Weeks

Number of Channels :

1

Width :

3.05mm

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Transistor Application :

SWITCHING

Power Dissipation-Max :

350mW Ta

Nominal Vgs :

800 mV

Radiation Hardening :

No

Element Configuration :

Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

25V

Rise Time :

8.5ns

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

8V

Max Junction Temperature (Tj) :

150°C

Resistance :

450mOhm

Vgs (Max) :

±8V

Height :

1.11mm

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

680mA Ta

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Mounting Type :

Surface Mount

Fall Time (Typ) :

8.5 ns

Terminal Position :

Dual

REACH SVHC :

No SVHC

Pbfree Code :

yes

Number of Elements :

1

Terminal Finish :

Tin

Continuous Drain Current (ID) :

680mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Mount :

Surface Mount

Turn On Delay Time :

3 ns

Published :

1997

FET Type :

N-Channel

Turn-Off Delay Time :

17 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Voltage - Rated DC :

25V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Voltage :

20V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Threshold Voltage :

800mV

Termination :

SMD/SMT

Current :

12A

Power Dissipation :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Dual Supply Voltage :

25V