FDS9953A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 10V

Turn On Delay Time :

4.5 ns

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

-30V

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Max Power Dissipation :

2W

Terminal Finish :

Tin (Sn)

Height :

1.5mm

Number of Elements :

2

Rise Time :

13ns

Nominal Vgs :

1.8 V

Continuous Drain Current (ID) :

2.9mA

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

REACH SVHC :

No SVHC

Power - Max :

900mW

Threshold Voltage :

-1.8V

Length :

5mm

Turn-Off Delay Time :

11 ns

Fall Time (Typ) :

2 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Voltage - Rated DC :

-30V

Pulsed Drain Current-Max (IDM) :

10A

Resistance :

130mOhm

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-2.9A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

185pF @ 15V

Power Dissipation :

2W

FET Feature :

Logic Level Gate

Weight :

230.4mg

JESD-609 Code :

e3

Series :

PowerTrench®

Width :

4mm

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

130m Ω @ 1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Radiation Hardening :

No

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

2.9A

Mount :

Surface Mount

Transistor Element Material :

SILICON