FDS9953A
- Mfr.Part #
- FDS9953A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 42,970
- In Stock :
- 42,970
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Lead Free :
- Lead Free
- Series :
- PowerTrench®
- Current Rating :
- -2.9A
- Power Dissipation :
- 2W
- FET Type :
- 2 P-Channel (Dual)
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 1.8 V
- Mounting Type :
- Surface Mount
- Resistance :
- 130mOhm
- Turn-Off Delay Time :
- 11 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Fall Time (Typ) :
- 2 ns
- Transistor Application :
- SWITCHING
- Element Configuration :
- Dual
- Pulsed Drain Current-Max (IDM) :
- 10A
- Gate to Source Voltage (Vgs) :
- 25V
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 4.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 10V
- Length :
- 5mm
- Number of Elements :
- 2
- Factory Lead Time :
- 10 Weeks
- Terminal Form :
- Gull wing
- Rise Time :
- 13ns
- Width :
- 4mm
- Voltage - Rated DC :
- -30V
- Number of Terminations :
- 8
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- -30V
- FET Feature :
- Logic Level Gate
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 2W
- Threshold Voltage :
- -1.8V
- Continuous Drain Current (ID) :
- 2.9mA
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power - Max :
- 900mW
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 1A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Weight :
- 230.4mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 185pF @ 15V
- Datasheets
- FDS9953A

FDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS9953A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS9953A Features
-2.9 A, -30 V
RDS(on) = 130 mΩ@ VGS = -10 V
RDS(on) = 200 mΩ @ VGS = -4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS9953A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
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