FDS9953A
- Mfr.Part #
- FDS9953A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 42,970
- In Stock :
- 42,970
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 13ns
- Nominal Vgs :
- 1.8 V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 2.9mA
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 10A
- Current Rating :
- -2.9A
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 130mOhm
- Turn On Delay Time :
- 4.5 ns
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.5mm
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 1A, 10V
- JESD-609 Code :
- e3
- Number of Terminations :
- 8
- Packaging :
- Tape and Reel (TR)
- Weight :
- 230.4mg
- Voltage - Rated DC :
- -30V
- Factory Lead Time :
- 10 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 185pF @ 15V
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Elements :
- 2
- Threshold Voltage :
- -1.8V
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 2 ns
- Element Configuration :
- Dual
- Turn-Off Delay Time :
- 11 ns
- Length :
- 5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Width :
- 4mm
- FET Feature :
- Logic Level Gate
- Power - Max :
- 900mW
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -30V
- REACH SVHC :
- No SVHC
- FET Type :
- 2 P-Channel (Dual)
- Max Power Dissipation :
- 2W
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A
- Power Dissipation :
- 2W
- Datasheets
- FDS9953A
FDS9953A Documents

FDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS9953A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS9953A Features
-2.9 A, -30 V
RDS(on) = 130 mΩ@ VGS = -10 V
RDS(on) = 200 mΩ @ VGS = -4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS9953A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
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