FDS9933BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

20V

FET Feature :

Logic Level Gate

Terminal Finish :

MATTE TIN

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

30A

Current - Continuous Drain (Id) @ 25°C :

4.9A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Series :

PowerTrench®

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain-source On Resistance-Max :

0.046Ohm

Terminal Form :

Gull wing

Power - Max :

900mW

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4.9A

Mounting Type :

Surface Mount

Pin Count :

8

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

46m Ω @ 4.9A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

985pF @ 10V

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING