FDS9933A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2W

Width :

4mm

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Length :

5mm

Continuous Drain Current (ID) :

3.8A

Max Power Dissipation :

2W

Voltage - Rated DC :

-20V

Drain to Source Breakdown Voltage :

-20V

Element Configuration :

Dual

Dual Supply Voltage :

-20V

Drain to Source Voltage (Vdss) :

20V

Rise Time :

9ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Nominal Vgs :

-800 mV

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Termination :

SMD/SMT

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

Power - Max :

900mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Turn On Delay Time :

6 ns

Number of Elements :

2

Fall Time (Typ) :

28 ns

Published :

1998

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Form :

Gull wing

Threshold Voltage :

-800mV

Current Rating :

-3.8A

Factory Lead Time :

10 Weeks

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.8A, 4.5V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

31 ns

Series :

PowerTrench®

Height :

1.5mm

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Resistance :

75mOhm

REACH SVHC :

No SVHC

Weight :

187mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99