FDS9933

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Number of Terminations :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5A

DS Breakdown Voltage-Min :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Rds On (Max) @ Id, Vgs :

55m Ω @ 3.2A, 4.5V

Drain-source On Resistance-Max :

0.055Ohm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

30A

Pin Count :

8

JESD-609 Code :

e3

Series :

PowerTrench®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 10V

Power - Max :

900mW

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

FET Type :

2 P-Channel (Dual)

JESD-30 Code :

R-PDSO-G8

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5A