FDS6930A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

17 ns

Mounting Type :

Surface Mount

Resistance :

40mOhm

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

8ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

PowerTrench®

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Current Rating :

5.5A

Rds On (Max) @ Id, Vgs :

40m Ω @ 5.5A, 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

900mW

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Power Dissipation :

2W

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

5.5A

Factory Lead Time :

10 Weeks

Number of Terminations :

8

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Threshold Voltage :

1.5V

Fall Time (Typ) :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 5V

Pbfree Code :

yes

Weight :

187mg

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Pins :

8

Terminal Form :

Gull wing