FDS6930A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

2W

Continuous Drain Current (ID) :

5.5A

Threshold Voltage :

1.5V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 5V

Element Configuration :

Dual

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Resistance :

40mOhm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Drain Current-Max (Abs) (ID) :

4.6A

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

17 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

187mg

Fall Time (Typ) :

13 ns

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Current Rating :

5.5A

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Max Power Dissipation :

900mW

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Turn On Delay Time :

5 ns

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

40m Ω @ 5.5A, 10V

Number of Terminations :

8

Mount :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

8ns

Terminal Form :

Gull wing

Number of Pins :

8