FDS6064N3
- Mfr.Part #
- FDS6064N3
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 23A 8SO
- Stock
- 8,920
- In Stock :
- 8,920
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 8
- DS Breakdown Voltage-Min :
- 20V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 23A
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 3W Ta
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7.191pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- JESD-609 Code :
- e4
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Vgs (Max) :
- ±8V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PDSO-G8
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 23A, 4.5V
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.004ohm
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Series :
- PowerTrench®
- Datasheets
- FDS6064N3

N-Channel Tape & Reel (TR) 4m Ω @ 23A, 4.5V ±8V 7.191pF @ 10V 98nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS6064N3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7.191pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 23A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
FDS6064N3 Features
a 20V drain to source voltage (Vdss)
FDS6064N3 Applications
There are a lot of Rochester Electronics, LLC
FDS6064N3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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