FDS6375
- Mfr.Part #
- FDS6375
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 17,110
- In Stock :
- 17,110
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 130mg
- Factory Lead Time :
- 18 Weeks
- Turn-Off Delay Time :
- 124 ns
- Continuous Drain Current (ID) :
- 8A
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e4
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Width :
- 4mm
- Length :
- 5mm
- Resistance :
- 24mOhm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Vgs (Max) :
- ±8V
- Terminal Position :
- Dual
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Series :
- PowerTrench®
- Fall Time (Typ) :
- 57 ns
- Nominal Vgs :
- -700 mV
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -20V
- Mount :
- Surface Mount
- Current Rating :
- -8A
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Terminal Form :
- Gull wing
- Threshold Voltage :
- -700mV
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 4.5V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2694pF @ 10V
- Published :
- 2001
- Power Dissipation-Max :
- 2.5W Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain Current-Max (Abs) (ID) :
- 8A
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 8A, 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Number of Pins :
- 8
- Dual Supply Voltage :
- -20V
- Gate to Source Voltage (Vgs) :
- 8V
- Rise Time :
- 9ns
- Drain to Source Breakdown Voltage :
- -20V
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 20V
- Height :
- 1.5mm
- Datasheets
- FDS6375

P-Channel Tape & Reel (TR) 24m Ω @ 8A, 4.5V ±8V 2694pF @ 10V 36nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS6375 Description
This P-channel 2.5V MOSFET FDS6375 is a rugged gate version of advanced PowerTritch technology. It has been optimized for power management applications with a wide range of gate drive voltages (2.5V-8V).
FDS6375 Features
-8.0 A, -20 V
RDS(on) = 24 mΩ @ VGS = -4.5 V
RDS(on) = 32 mΩ @ VGS = -2.5 V
Low gate charge (26nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6375 Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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