FDS6910
- Mfr.Part #
- FDS6910
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.5A 8SOIC
- Stock
- 57,908
- In Stock :
- 57,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Packaging :
- Tape and Reel (TR)
- Length :
- 5mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Threshold Voltage :
- 1.8V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Factory Lead Time :
- 10 Weeks
- Series :
- PowerTrench®
- Voltage - Rated DC :
- 30V
- Turn On Delay Time :
- 9 ns
- Voltage :
- 30V
- Power Dissipation :
- 1.6W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 1.6W
- Operating Temperature :
- -55°C~150°C TJ
- Current :
- 75A
- Radiation Hardening :
- No
- FET Feature :
- Logic Level Gate
- Power - Max :
- 900mW
- Number of Terminations :
- 8
- FET Type :
- 2 N-Channel (Dual)
- Rise Time :
- 5ns
- Height :
- 1.5mm
- Published :
- 2004
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 7.5A
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 7.5A, 10V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 1130pF @ 15V
- Current Rating :
- 7.5A
- Pbfree Code :
- yes
- Nominal Vgs :
- 1.8 V
- Width :
- 4mm
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 5 ns
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- 30V
- Number of Pins :
- 8
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 26 ns
- Resistance :
- 13mOhm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Datasheets
- FDS6910
FDS6910 Documents

FDS6910 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6910 Description
These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6910 Features
7.5A, 30V
?RDS(ON) = 13 mΩ @ VGS = 10V
?RDS(ON) = 17 mΩ @ VGS = 4.5V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6910 Applications
This product is general usage and suitable for many different applications.
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