FDS6910
- Mfr.Part #
- FDS6910
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.5A 8SOIC
- Stock
- 57,908
- In Stock :
- 57,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 9 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 7.5A, 10V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Voltage :
- 30V
- Threshold Voltage :
- 1.8V
- Resistance :
- 13mOhm
- Voltage - Rated DC :
- 30V
- Max Power Dissipation :
- 1.6W
- Series :
- PowerTrench®
- FET Feature :
- Logic Level Gate
- Dual Supply Voltage :
- 30V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.6W
- Current :
- 75A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 1130pF @ 15V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Turn-Off Delay Time :
- 26 ns
- Width :
- 4mm
- Continuous Drain Current (ID) :
- 7.5A
- Power - Max :
- 900mW
- Length :
- 5mm
- Rise Time :
- 5ns
- Element Configuration :
- Dual
- Number of Pins :
- 8
- FET Type :
- 2 N-Channel (Dual)
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 5 ns
- Height :
- 1.5mm
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Published :
- 2004
- Current Rating :
- 7.5A
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Nominal Vgs :
- 1.8 V
- Datasheets
- FDS6910

FDS6910 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6910 Description
These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6910 Features
7.5A, 30V
?RDS(ON) = 13 mΩ @ VGS = 10V
?RDS(ON) = 17 mΩ @ VGS = 4.5V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6910 Applications
This product is general usage and suitable for many different applications.
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