FDS5692Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1.025pF @ 25V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

24m Ω @ 5.8A, 10V

Drain-source On Resistance-Max :

0.024Ohm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

8

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G8

Series :

UltraFET™

FET Type :

N-Channel

Pin Count :

8

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

50V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

5.8A

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

DS Breakdown Voltage-Min :

50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount