FDS5672
- Mfr.Part #
- FDS5672
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A 8SOIC
- Stock
- 43,253
- In Stock :
- 43,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.75mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Voltage - Rated DC :
- 60V
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 60V
- Rise Time :
- 20ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Power Dissipation :
- 2.5W
- Width :
- 4mm
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Current Rating :
- 12A
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 14 ns
- Weight :
- 130mg
- Published :
- 2001
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn-Off Delay Time :
- 35 ns
- Length :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 12A, 10V
- Number of Elements :
- 1
- Turn On Delay Time :
- 13 ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation-Max :
- 2.5W Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 10MOhm
- Threshold Voltage :
- 4V
- Nominal Vgs :
- 4 V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 12mA
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Datasheets
- FDS5672

N-Channel Tape & Reel (TR) 10m Ω @ 12A, 10V ±20V 2200pF @ 25V 45nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS5672 Description
FDS5672 is a type of N-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge and fast switching speed. MOSFET FDS5672 is primarily designed to enhance the overall efficiency of DC/DC converters through either synchronous or conventional switching PWM controllers.
FDS5672 Features
-
Low RDS (on)
-
Low gate charge
-
Fast switching speed
-
Available in the SO-8 package
-
High power and current handling capability
FDS5672 Applications
-
DC/DC converters
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