FDS5680
- Mfr.Part #
- FDS5680
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 8A 8SOIC
- Stock
- 2,013
- In Stock :
- 2,013
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Height :
- 1.5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn-Off Delay Time :
- 16 ns
- Rise Time :
- 8ns
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 60V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Resistance :
- 20mOhm
- Turn On Delay Time :
- 13 ns
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1850pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 32 ns
- Current Rating :
- 8A
- Mounting Type :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 8A
- Length :
- 5mm
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 2.5W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 1999
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Voltage - Rated DC :
- 60V
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 8A, 10V
- Power Dissipation :
- 2.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 8A
- Nominal Vgs :
- 2.5 V
- Mount :
- Surface Mount
- Threshold Voltage :
- 2.5V
- Drain to Source Breakdown Voltage :
- 60V
- Width :
- 4mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Factory Lead Time :
- 11 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Number of Terminations :
- 8
- Weight :
- 130mg
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- REACH SVHC :
- No SVHC
- Datasheets
- FDS5680

N-Channel Tape & Reel (TR) 20m Ω @ 8A, 10V ±20V 1850pF @ 15V 42nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS5680 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and
fast switching are required.
FDS5680 Features
8 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 V
RDS(ON) = 0.025 @ VGS = 6 V
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
lowR DS(ON)
High power and current handling capability
FDS5680 Applications
DC/DC converter
Load switch
Motor drives
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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