FDS5670
- Mfr.Part #
- FDS5670
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10A 8SOIC
- Stock
- 9,083
- In Stock :
- 9,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current :
- 10A
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 23 ns
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 8
- Width :
- 4mm
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 8
- Height :
- 1.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 10A
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Length :
- 5mm
- Turn On Delay Time :
- 16 ns
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Rise Time :
- 10ns
- Resistance :
- 14mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Published :
- 1999
- Dual Supply Voltage :
- 60V
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 10A, 10V
- Current Rating :
- 10A
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.5W Ta
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 50 ns
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 2.4V
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Series :
- PowerTrench®
- Nominal Vgs :
- 2.4 V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2.5W
- Voltage :
- 60V
- Datasheets
- FDS5670

N-Channel Tape & Reel (TR) 14m Ω @ 10A, 10V ±20V 2900pF @ 15V 70nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS5670 Description
The FDS5670 is an N-channel MOSFET produced using PowerTrench? process. The FDS5670 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
FDS5670 Features
-
10 A, 60 V
-
RDS(ON) = 0.014 Ω @ VGS = 10 V
-
RDS(ON) = 0.017 Ω @ VGS = 6 V
-
Low gate charge
-
Fast switching speed
-
High performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDS5670 Applications
-
Synchronous Rectifier for DC/DC Converters
-
Notebook Vcore/ GPU low side switch
-
Networking Point of Load low side switch
-
Telecom secondary side rectification
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