FDS5690

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1107pF @ 30V

Weight :

130mg

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Rds On (Max) @ Id, Vgs :

28m Ω @ 7A, 10V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

7A

Drain to Source Breakdown Voltage :

60V

Contact Plating :

Tin

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

JESD-609 Code :

e3

Rise Time :

9ns

Turn-Off Delay Time :

24 ns

Voltage - Rated DC :

60V

Element Configuration :

Single

Continuous Drain Current (ID) :

7A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Current Rating :

7A

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

2.5W

ECCN Code :

EAR99

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Length :

5mm

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta

Width :

4mm

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Pins :

8

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Number of Terminations :

8

Resistance :

28mOhm