FDS4770
- Mfr.Part #
- FDS4770
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 13.2A 8SOIC
- Stock
- 23,090
- In Stock :
- 23,090
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- JESD-30 Code :
- R-PDSO-G8
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Qualification Status :
- COMMERCIAL
- DS Breakdown Voltage-Min :
- 40V
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.819pF @ 20V
- Power Dissipation-Max :
- 2.5W Ta
- Drain Current-Max (Abs) (ID) :
- 13.2A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 13.2A Ta
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 13.2A, 10V
- Datasheets
- FDS4770

N-Channel Tape & Reel (TR) 7.5m Ω @ 13.2A, 10V ±20V 2.819pF @ 20V 67nC @ 10V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4770 Overview
The maximum input capacitance of this device is 2.819pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 13.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FDS4770 Features
a 40V drain to source voltage (Vdss)
FDS4770 Applications
There are a lot of Rochester Electronics, LLC
FDS4770 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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