FDS4685
- Mfr.Part #
- FDS4685
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 8.2A 8SOIC
- Stock
- 30,345
- In Stock :
- 30,345
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- -40V
- Power Dissipation :
- 2.5W
- Rise Time :
- 11ns
- Factory Lead Time :
- 18 Weeks
- Length :
- 5mm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Width :
- 4mm
- Current Rating :
- -8.2A
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1872pF @ 20V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Height :
- 1.5mm
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 8.2A, 10V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 40V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 50 ns
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.5W Ta
- Voltage - Rated DC :
- -40V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Mount :
- Surface Mount
- Nominal Vgs :
- -1.6 V
- Continuous Drain Current (ID) :
- 8.2mA
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e4
- Weight :
- 130mg
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 18 ns
- Threshold Voltage :
- -1.6V
- Resistance :
- 27mOhm
- FET Type :
- P-Channel
- Turn On Delay Time :
- 14 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 8.2A Ta
- Datasheets
- FDS4685

P-Channel Tape & Reel (TR) 27m Ω @ 8.2A, 10V ±20V 1872pF @ 20V 27nC @ 5V 40V 8-SOIC (0.154, 3.90mm Width)
FDS4685 Description
FDS4685 P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. FDS4685 has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
FDS4685 Features
-
-8.2A, -40V
-
RDS(ON) = 0.027 mΩ @ VGS = -10V
-
RDS(ON) = 0.035 mΩ @ VGS = -4.5V
-
Fast switching speed
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDS4685 Applications
-
Power management
-
Load switch
-
Battery protection
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