FDS4470
- Mfr.Part #
- FDS4470
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.5A 8SOIC
- Stock
- 17,140
- In Stock :
- 17,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- Current Rating :
- 12.5A
- Number of Elements :
- 1
- Weight :
- 130mg
- Series :
- PowerTrench®
- Number of Terminations :
- 8
- Factory Lead Time :
- 9 Weeks
- Drain to Source Breakdown Voltage :
- 40V
- Rise Time :
- 12ns
- Width :
- 4mm
- Turn On Delay Time :
- 14 ns
- Power Dissipation :
- 2.5W
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 40V
- Fall Time (Typ) :
- 29 ns
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta
- Vgs (Max) :
- +30V, -20V
- Avalanche Energy Rating (Eas) :
- 370 mJ
- Radiation Hardening :
- No
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 37 ns
- Threshold Voltage :
- 3.9V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2659pF @ 20V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 50A
- Resistance :
- 9mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Length :
- 5mm
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 2.5W Ta
- Continuous Drain Current (ID) :
- 12.5A
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 1.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 12.5A, 10V
- Datasheets
- FDS4470
FDS4470 Documents

N-Channel Tape & Reel (TR) 9m Ω @ 12.5A, 10V +30V, -20V 2659pF @ 20V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS4470 Description
The FDS4470 is an N-channel MOSFET produced using the PowerTrench? process. The onsemi FDS4470 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The FDS4470 has been optimized for low gate charge, low RDS (ON), and fast switching speed. The FDS4470 is offered in the SOIC-8 package. It is specified for operation from -55°C to +175°C.
FDS4470 Features
-
12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
-
Low gate charge (45 nC)
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
-
In the SOIC-8 package
FDS4470 Applications
-
cellular phones and laptop computers,
-
high-efficiency LED power sources
-
photovoltaic systems
-
wind turbines
-
switched-mode power supply
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