FDS4470
- Mfr.Part #
- FDS4470
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.5A 8SOIC
- Stock
- 17,140
- In Stock :
- 17,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 370 mJ
- Voltage - Rated DC :
- 40V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 2.5W
- Transistor Element Material :
- SILICON
- Width :
- 4mm
- Threshold Voltage :
- 3.9V
- Height :
- 1.5mm
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 50A
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2659pF @ 20V
- Length :
- 5mm
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.5W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Vgs (Max) :
- +30V, -20V
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 12.5A, 10V
- Resistance :
- 9mOhm
- Continuous Drain Current (ID) :
- 12.5A
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Rise Time :
- 12ns
- Turn On Delay Time :
- 14 ns
- Number of Pins :
- 8
- Weight :
- 130mg
- Current Rating :
- 12.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Terminal Position :
- Dual
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 37 ns
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 29 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Factory Lead Time :
- 9 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Number of Terminations :
- 8
- JESD-609 Code :
- e4
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDS4470

N-Channel Tape & Reel (TR) 9m Ω @ 12.5A, 10V +30V, -20V 2659pF @ 20V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS4470 Description
The FDS4470 is an N-channel MOSFET produced using the PowerTrench? process. The onsemi FDS4470 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The FDS4470 has been optimized for low gate charge, low RDS (ON), and fast switching speed. The FDS4470 is offered in the SOIC-8 package. It is specified for operation from -55°C to +175°C.
FDS4470 Features
-
12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
-
Low gate charge (45 nC)
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
-
In the SOIC-8 package
FDS4470 Applications
-
cellular phones and laptop computers,
-
high-efficiency LED power sources
-
photovoltaic systems
-
wind turbines
-
switched-mode power supply
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