FDS4465-G

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Mfr.Part #
FDS4465-G
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 8SOIC
Stock
4,051
In Stock :
4,051

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Obsolete
Power Dissipation (Max) :
1.2W (Ta)
Gate Charge (Qg) (Max) @ Vgs :
120 nC @ 4.5 V
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
8237 pF @ 10 V
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
20 V
Mount :
Surface Mount
FET Feature :
-
Max Operating Temperature :
175 °C
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Gate to Source Voltage (Vgs) :
8 V
Series :
PowerTrench®
Contact Plating :
Tin
Supplier Device Package :
8-SOIC
Current - Continuous Drain (Id) @ 25°C :
13.5A (Ta)
RoHS :
Compliant
Operating Temperature :
-55°C ~ 175°C (TJ)
FET Type :
P-Channel
Vgs (Max) :
±8V
Rise Time :
24 ns
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Turn-On Delay Time :
20 ns
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Continuous Drain Current (ID) :
13.5 A
Turn-Off Delay Time :
300 ns
Package :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
8.5mOhm @ 13.5A, 4.5V
Technology :
MOSFET (Metal Oxide)
Datasheets
FDS4465-G
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4465-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C ~ 175°C (TJ), FDS4465-G pinout, FDS4465-G datasheet PDF, FDS4465-G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4465-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



MOSFET (Metal Oxide) P-Channel 8.5mOhm @ 13.5A, 4.5V ±8V 8237 pF @ 10 V 120 nC @ 4.5 V 20 V 8-SOIC (0.154, 3.90mm Width)

FDS4465-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8237 pF @ 10 V.This device conducts a continuous drain current (ID) of 13.5 A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 300 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8 V.This transistor requires a drain-source voltage (Vdss) of 20 V.

FDS4465-G Features


a continuous drain current (ID) of 13.5 A
the turn-off delay time is 300 ns
a 20 V drain to source voltage (Vdss)


FDS4465-G Applications


There are a lot of ON Semiconductor
FDS4465-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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