FDS4465

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Length :

5mm

Max Junction Temperature (Tj) :

175°C

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 13.5A, 4.5V

Turn-Off Delay Time :

300 ns

Continuous Drain Current (ID) :

13.5A

Current - Continuous Drain (Id) @ 25°C :

13.5A Ta

Turn On Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Resistance :

8.5mOhm

Fall Time (Typ) :

140 ns

FET Type :

P-Channel

Weight :

130mg

Voltage - Rated DC :

-20V

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

-20V

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

Published :

2003

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

8V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

50A

Termination :

SMD/SMT

Mount :

Surface Mount

Height :

1.75mm

Lead Free :

Lead Free

Nominal Vgs :

-600 mV

Terminal Position :

Dual

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

8237pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Width :

4mm

Number of Terminations :

8

Current Rating :

-13.5A

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Single

Number of Elements :

1

Rise Time :

24ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e4

Threshold Voltage :

-600mV

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 4.5V

Series :

PowerTrench®

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)