FDS4465

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Mfr.Part #
FDS4465
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 13.5A 8SOIC
Stock
144,553
In Stock :
144,553

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
2.5W Ta
Length :
5mm
Max Junction Temperature (Tj) :
175°C
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
13.5A
JESD-609 Code :
e4
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Published :
2003
Number of Channels :
1
Turn-Off Delay Time :
300 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Voltage - Rated DC :
-20V
Current Rating :
-13.5A
Rise Time :
24ns
Terminal Position :
Dual
Operating Temperature :
-55°C~175°C TJ
Termination :
SMD/SMT
Lead Free :
Lead Free
Element Configuration :
Single
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Number of Terminations :
8
Series :
PowerTrench®
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±8V
Number of Elements :
1
Width :
4mm
Drain to Source Breakdown Voltage :
-20V
Input Capacitance (Ciss) (Max) @ Vds :
8237pF @ 10V
Nominal Vgs :
-600 mV
Pulsed Drain Current-Max (IDM) :
50A
Fall Time (Typ) :
140 ns
Terminal Form :
Gull wing
Dual Supply Voltage :
-20V
Contact Plating :
Tin
Threshold Voltage :
-600mV
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Current - Continuous Drain (Id) @ 25°C :
13.5A Ta
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 4.5V
Weight :
130mg
Number of Pins :
8
Drain to Source Voltage (Vdss) :
20V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Pbfree Code :
yes
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Turn On Delay Time :
20 ns
Radiation Hardening :
No
Mount :
Surface Mount
Resistance :
8.5mOhm
Factory Lead Time :
18 Weeks
Power Dissipation :
2.5W
Height :
1.75mm
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
8V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4465 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~175°C TJ, Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, FDS4465 pinout, FDS4465 datasheet PDF, FDS4465 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4465 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS4465


P-Channel Tape & Reel (TR) 8.5m Ω @ 13.5A, 4.5V ±8V 8237pF @ 10V 120nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)

FDS4465 Description


FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).



FDS4465 Features


  • Low RDS (on)

  • Low gate charge

  • Fast switching speed

  • Available in the SOIC8 package

  • High power and current handling capability



FDS4465 Applications


  • Power management applications

  • NVTFS4823NTAG Description


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