FDS4435BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Factory Lead Time :

18 Weeks

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Number of Elements :

1

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.8A, 10V

Power Dissipation-Max :

2.5W Ta

Lead Free :

Lead Free

Width :

4mm

Series :

PowerTrench®

Mount :

Surface Mount

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

P-Channel

Rise Time :

13ns

Threshold Voltage :

-2.1V

Current Rating :

-8.8A

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Length :

5mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

-8.8A

Turn-Off Delay Time :

30 ns

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.75mm

Resistance :

20mOhm

Weight :

130mg

ECCN Code :

EAR99

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1845pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

-30V

Published :

2009

Feedback Cap-Max (Crss) :

345 pF

Nominal Vgs :

-2.1 V

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Fall Time (Typ) :

38 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant