FDS4435BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-30V

Factory Lead Time :

18 Weeks

Length :

5mm

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1845pF @ 15V

Published :

2009

Element Configuration :

Single

Pbfree Code :

yes

Feedback Cap-Max (Crss) :

345 pF

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

10 ns

Terminal Position :

Dual

FET Type :

P-Channel

Width :

4mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

38 ns

Drain to Source Breakdown Voltage :

-30V

Lead Free :

Lead Free

Number of Terminations :

8

Nominal Vgs :

-2.1 V

Mount :

Surface Mount

Current Rating :

-8.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.5W

REACH SVHC :

No SVHC

Series :

PowerTrench®

Threshold Voltage :

-2.1V

Contact Plating :

Tin

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Pins :

8

Resistance :

20mOhm

Weight :

130mg

Number of Elements :

1

Rise Time :

13ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-8.8A

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.75mm