FDP8N50NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

UniFET™

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tube

Number of Terminations :

3

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Weight :

1.8g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

850m Ω @ 4A, 10V

Power Dissipation-Max :

130W Tc

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

17 ns

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

3

Length :

10.67mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Width :

4.83mm

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Turn-Off Delay Time :

43 ns

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Rise Time :

34ns

Fall Time (Typ) :

27 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Mount :

Through Hole

Mounting Type :

Through Hole

Factory Lead Time :

6 Weeks

Power Dissipation :

130W

Published :

2010

Continuous Drain Current (ID) :

8A

Height :

9.4mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.85Ohm

ECCN Code :

EAR99