FDP8030L
- Mfr.Part #
- FDP8030L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO220-3
- Stock
- 1,260
- In Stock :
- 1,260
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Rise Time :
- 185ns
- Weight :
- 1.8g
- Continuous Drain Current (ID) :
- 80A
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Nominal Vgs :
- 1.5 V
- Turn-Off Delay Time :
- 160 ns
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 30V
- JESD-609 Code :
- e3
- Current Rating :
- 80A
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 187W
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 15V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 187W Tc
- REACH SVHC :
- No SVHC
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 80A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 20 ns
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 200 ns
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 5V
- Operating Temperature :
- -65°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Threshold Voltage :
- 1.5V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Datasheets
- FDP8030L
FDP8030L Documents

N-Channel Tube 3.5m Ω @ 80A, 10V ±20V 10500pF @ 15V 170nC @ 5V TO-220-3
FDP8030L Descriptions
The FDP8030L was created to increase the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Other MOSFETS with equivalent RDS(on) parameters have faster switching and lower gate charge than the FDP8030L. As a result, driving a MOSFET is easier and safer (even at very high frequencies), and DC/DC power supply systems are more efficient overall. The operating temperature of FDP8030L is -65°C~175°C TJ and its maximum power dissipation are 187W. FDP8030L has 3 pins and it is available in TO-220-3 packaging way.
FDP8030L Features
-
80 A, 30 V
-
Critical DC electrical parameters specified at elevated temperature
-
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
-
High-performance trench technology for extremely low RDS(ON)
-
175°C maximum junction temperature rating
FDP8030L Applications
-
General-purpose amplifier
-
Switching applications
-
Power management
-
Industrial
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