FDP8447L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

8.7mOhm

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Radiation Hardening :

No

Contact Plating :

Tin

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 20V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

28 ns

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

7ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

12A Ta 50A Tc

ECCN Code :

EAR99

Published :

2006

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 14A, 10V

Series :

PowerTrench®

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

50A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Turn On Delay Time :

9 ns

Factory Lead Time :

9 Weeks

Package / Case :

TO-220-3

Power Dissipation-Max :

2W Ta 60W Tc

JESD-609 Code :

e3

Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Fall Time (Typ) :

4 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

12A

FET Type :

N-Channel