FDP8442-F085
- Mfr.Part #
- FDP8442-F085
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 138,554
- In Stock :
- 138,554
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0031Ohm
- Fall Time (Typ) :
- 17.2 ns
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 19.3ns
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 23A Ta 80A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 235nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 57 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 40V
- Weight :
- 1.8g
- Power Dissipation-Max :
- 254W Tc
- Drain Current-Max (Abs) (ID) :
- 23A
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 80A
- Avalanche Energy Rating (Eas) :
- 720 mJ
- Rds On (Max) @ Id, Vgs :
- 3.1m Ω @ 80A, 10V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 12200pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 254W
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Datasheets
- FDP8442-F085

N-Channel Tube 3.1m Ω @ 80A, 10V ±20V 12200pF @ 25V 235nC @ 10V TO-220-3
FDP8442-F085 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 720 mJ.A device's maximal input capacitance is 12200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 23A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 57 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
FDP8442-F085 Features
the avalanche energy rating (Eas) is 720 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 57 ns
FDP8442-F085 Applications
There are a lot of ON Semiconductor
FDP8442-F085 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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