FDP8441

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Factory Lead Time :

9 Weeks

Threshold Voltage :

2.8V

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Number of Elements :

1

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Pins :

3

Fall Time (Typ) :

17.9 ns

Resistance :

2.7MOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 80A, 10V

REACH SVHC :

No SVHC

Element Configuration :

Single

Mounting Type :

Through Hole

JESD-609 Code :

e3

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

23A Ta 80A Tc

Vgs (Max) :

±20V

Current Rating :

80A

FET Type :

N-Channel

Turn-Off Delay Time :

75 ns

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Weight :

1.8g

Voltage - Rated DC :

40V

Avalanche Energy Rating (Eas) :

947 mJ

Pbfree Code :

yes

Power Dissipation-Max :

300W Tc

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Power Dissipation :

300W

Rise Time :

24ns

Turn On Delay Time :

23 ns