FDP8880
- Mfr.Part #
- FDP8880
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A/54A TO220-3
- Stock
- 25,846
- In Stock :
- 25,846
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8 ns
- Nominal Vgs :
- 2.5 V
- Current Rating :
- 54A
- Power Dissipation :
- 55W
- Width :
- 4.83mm
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 47 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Weight :
- 1.8g
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 107ns
- Voltage - Rated DC :
- 30V
- Resistance :
- 11.6mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 54A Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 2.5V
- Power Dissipation-Max :
- 55W Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 30V
- Fall Time (Typ) :
- 51 ns
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1240pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 11.6m Ω @ 40A, 10V
- Published :
- 2005
- Length :
- 10.67mm
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Factory Lead Time :
- 10 Weeks
- Height :
- 9.65mm
- Continuous Drain Current (ID) :
- 54A
- Datasheets
- FDP8880
FDP8880 Documents

N-Channel Tube 11.6m Ω @ 40A, 10V ±20V 1240pF @ 15V 29nC @ 10V TO-220-3
FDP8880 Description
This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It was designed with a low gate charge, low rDS(DN), and quick switching speed in mind.
FDP8880 Features
-
Vqs = 4.5V, Iq = 40A, rDS(ON) = 14.5mQ
-
VGS = 10V, lD = 40A, r0S(ON)=
-
Extremely low rDS with high-performance trench technology (ON)
-
low entry fee
-
Capacity to handle high power and current
-
RoHS Complicant is a word that has a lot of different meanings depending on who you ask
FDP8880 Applications
Converters from DC to DC
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