FDP8880

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Mfr.Part #
FDP8880
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 11A/54A TO220-3
Stock
25,846
In Stock :
25,846

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
8 ns
Nominal Vgs :
2.5 V
Current Rating :
54A
Power Dissipation :
55W
Width :
4.83mm
FET Type :
N-Channel
Turn-Off Delay Time :
47 ns
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Weight :
1.8g
Terminal Finish :
Tin (Sn)
Qualification Status :
Not Qualified
Series :
PowerTrench®
Element Configuration :
Single
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Pbfree Code :
yes
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rise Time :
107ns
Voltage - Rated DC :
30V
Resistance :
11.6mOhm
Current - Continuous Drain (Id) @ 25°C :
11A Ta 54A Tc
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
2.5V
Power Dissipation-Max :
55W Tc
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Drain to Source Breakdown Voltage :
30V
Fall Time (Typ) :
51 ns
JEDEC-95 Code :
TO-220AB
Input Capacitance (Ciss) (Max) @ Vds :
1240pF @ 15V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
11.6m Ω @ 40A, 10V
Published :
2005
Length :
10.67mm
Vgs (Max) :
±20V
Mount :
Through Hole
Case Connection :
DRAIN
Number of Terminations :
3
Factory Lead Time :
10 Weeks
Height :
9.65mm
Continuous Drain Current (ID) :
54A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP8880 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, FDP8880 pinout, FDP8880 datasheet PDF, FDP8880 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP8880 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP8880


N-Channel Tube 11.6m Ω @ 40A, 10V ±20V 1240pF @ 15V 29nC @ 10V TO-220-3

FDP8880 Description


This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It was designed with a low gate charge, low rDS(DN), and quick switching speed in mind.



FDP8880 Features


  • Vqs = 4.5V, Iq = 40A, rDS(ON) = 14.5mQ

  • VGS = 10V, lD = 40A, r0S(ON)=

  • Extremely low rDS with high-performance trench technology (ON)

  • low entry fee

  • Capacity to handle high power and current

  • RoHS Complicant is a word that has a lot of different meanings depending on who you ask



FDP8880 Applications


Converters from DC to DC


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