FDP8876
- Mfr.Part #
- FDP8876
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 70A TO220-3
- Stock
- 8,045
- In Stock :
- 8,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0105Ohm
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- Drain Current-Max (Abs) (ID) :
- 70A
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- Unknown
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 30V
- Rds On (Max) @ Id, Vgs :
- 8.7m Ω @ 40A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drain to Source Voltage (Vdss) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 180 mJ
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.7pF @ 15V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- Terminal Position :
- Single
- Datasheets
- FDP8876
FDP8876 Documents

N-Channel Tube 8.7m Ω @ 40A, 10V ±20V 1.7pF @ 15V 45nC @ 10V 30V TO-220-3
FDP8876 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 180 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.7pF @ 15V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDP8876 Features
the avalanche energy rating (Eas) is 180 mJ
a 30V drain to source voltage (Vdss)
FDP8876 Applications
There are a lot of Rochester Electronics, LLC
FDP8876 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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