FDP8876
- Mfr.Part #
- FDP8876
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 70A TO220-3
- Stock
- 8,045
- In Stock :
- 8,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Series :
- PowerTrench®
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 30V
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.7pF @ 15V
- Drain Current-Max (Abs) (ID) :
- 70A
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Power Dissipation-Max :
- 70W Tc
- Rds On (Max) @ Id, Vgs :
- 8.7m Ω @ 40A, 10V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.0105Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDP8876

N-Channel Tube 8.7m Ω @ 40A, 10V ±20V 1.7pF @ 15V 45nC @ 10V 30V TO-220-3
FDP8876 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 180 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.7pF @ 15V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDP8876 Features
the avalanche energy rating (Eas) is 180 mJ
a 30V drain to source voltage (Vdss)
FDP8876 Applications
There are a lot of Rochester Electronics, LLC
FDP8876 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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