FDP8874

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Weight :

1.8g

Width :

4.83mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rise Time :

128ns

Number of Elements :

1

Current Rating :

121A

Case Connection :

DRAIN

Fall Time (Typ) :

31 ns

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 15V

Pbfree Code :

yes

Number of Terminations :

3

Factory Lead Time :

10 Weeks

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 40A, 10V

Height :

9.4mm

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

30V

Series :

PowerTrench®

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.0066Ohm

Element Configuration :

Single

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

110W Tc

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

16A Ta 114A Tc

Power Dissipation :

110W

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

44 ns

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

114A

Vgs (Max) :

±20V

Length :

10.67mm

FET Type :

N-Channel

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

80A