FDP8870

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

4.1mOhm

Weight :

1.8g

Max Power Dissipation :

160W

Pbfree Code :

yes

Power Dissipation :

160W

Continuous Drain Current (ID) :

156A

Published :

2004

Width :

4.83mm

Current Rating :

160A

Max Operating Temperature :

175°C

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On Max :

4.1 mΩ

Threshold Voltage :

2.5V

Turn-Off Delay Time :

70 ns

Mount :

Through Hole

Height :

9.4mm

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Factory Lead Time :

10 Weeks

Number of Terminations :

3

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

Min Operating Temperature :

-55°C

Package / Case :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Rise Time :

105ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Elements :

1

Fall Time (Typ) :

46 ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Resistance :

4.1mOhm

Terminal Finish :

Tin (Sn)

Length :

10.67mm

Voltage - Rated DC :

30V

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Nominal Vgs :

2.5 V

Radiation Hardening :

No

Lead Free :

Lead Free

Input Capacitance :

5.2nF

JESD-609 Code :

e3