FDP8870
- Mfr.Part #
- FDP8870
- Manufacturer
- onsemi
- Package / Case
- TO-220AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 156A TO-220AB
- Stock
- 35,371
- In Stock :
- 35,371
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 46 ns
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 9.4mm
- Package / Case :
- TO-220AB
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Voltage - Rated DC :
- 30V
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.67mm
- Factory Lead Time :
- 10 Weeks
- Rise Time :
- 105ns
- Turn On Delay Time :
- 11 ns
- Mount :
- Through Hole
- Published :
- 2004
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Rds On Max :
- 4.1 mΩ
- Packaging :
- Tube
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- 156A
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 70 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 160W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 2.5V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.83mm
- Resistance :
- 4.1mOhm
- Max Power Dissipation :
- 160W
- Number of Terminations :
- 3
- Max Operating Temperature :
- 175°C
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Weight :
- 1.8g
- Nominal Vgs :
- 2.5 V
- Drain to Source Resistance :
- 4.1mOhm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance :
- 5.2nF
- JESD-609 Code :
- e3
- Current Rating :
- 160A
- Datasheets
- FDP8870
FDP8870 Documents

Tube 30V TO-220AB
FDP8870 Description
The FDP8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
FDP8870 Features
-
High performance trench technology for extremely low rDS(ON)
-
Low gate charge
-
High power and current handling capability
-
RoHS Compliant
-
Lead Free
-
No SVHC
FDP8870 Applications
-
DC/DC converters
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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