FDP8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance :

5.2nF

Packaging :

Tube

Width :

4.83mm

Power Dissipation :

160W

REACH SVHC :

No SVHC

Number of Elements :

1

Lead Free :

Lead Free

Continuous Drain Current (ID) :

156A

Min Operating Temperature :

-55°C

Voltage - Rated DC :

30V

Length :

10.67mm

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Max Operating Temperature :

175°C

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

11 ns

Factory Lead Time :

10 Weeks

Mount :

Through Hole

Rds On Max :

4.1 mΩ

Case Connection :

DRAIN

Number of Terminations :

3

Turn-Off Delay Time :

70 ns

Height :

9.4mm

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Fall Time (Typ) :

46 ns

Published :

2004

Max Power Dissipation :

160W

Transistor Application :

SWITCHING

Drain to Source Resistance :

4.1mOhm

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

2.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

160A

Rise Time :

105ns

JESD-609 Code :

e3

Nominal Vgs :

2.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.8g

Package / Case :

TO-220AB

Drain to Source Breakdown Voltage :

30V

Number of Pins :

3

Resistance :

4.1mOhm

ECCN Code :

EAR99