FDP8870

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Mfr.Part #
FDP8870
Manufacturer
onsemi
Package / Case
TO-220AB
Datasheet
Download
Description
MOSFET N-CH 30V 156A TO-220AB
Stock
35,371
In Stock :
35,371

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
46 ns
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
9.4mm
Package / Case :
TO-220AB
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Voltage - Rated DC :
30V
Case Connection :
DRAIN
Element Configuration :
Single
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
Length :
10.67mm
Factory Lead Time :
10 Weeks
Rise Time :
105ns
Turn On Delay Time :
11 ns
Mount :
Through Hole
Published :
2004
Radiation Hardening :
No
Polarity/Channel Type :
N-Channel
Rds On Max :
4.1 mΩ
Packaging :
Tube
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
30V
Continuous Drain Current (ID) :
156A
Number of Pins :
3
Turn-Off Delay Time :
70 ns
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
160W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
2.5V
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Width :
4.83mm
Resistance :
4.1mOhm
Max Power Dissipation :
160W
Number of Terminations :
3
Max Operating Temperature :
175°C
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
30V
Lead Free :
Lead Free
Weight :
1.8g
Nominal Vgs :
2.5 V
Drain to Source Resistance :
4.1mOhm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance :
5.2nF
JESD-609 Code :
e3
Current Rating :
160A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP8870 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220AB, Number of Pins:3, Number of Terminations:3, FDP8870 pinout, FDP8870 datasheet PDF, FDP8870 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP8870 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP8870


Tube 30V TO-220AB

FDP8870 Description


The FDP8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.



FDP8870 Features


  • High performance trench technology for extremely low rDS(ON)

  • Low gate charge

  • High power and current handling capability

  • RoHS Compliant

  • Lead Free

  • No SVHC



FDP8870 Applications


  • DC/DC converters

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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