FDP8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Height :

9.4mm

Weight :

1.8g

Current Rating :

160A

Fall Time (Typ) :

46 ns

Length :

10.67mm

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

160W

Pbfree Code :

yes

Turn On Delay Time :

11 ns

Voltage - Rated DC :

30V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Max Operating Temperature :

175°C

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

156A

Mount :

Through Hole

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

REACH SVHC :

No SVHC

Rise Time :

105ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

160W

Radiation Hardening :

No

Published :

2004

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220AB

Factory Lead Time :

10 Weeks

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

70 ns

Number of Pins :

3

Resistance :

4.1mOhm

Number of Terminations :

3

Lead Free :

Lead Free

Case Connection :

DRAIN

Nominal Vgs :

2.5 V

Threshold Voltage :

2.5V

Transistor Application :

SWITCHING

Rds On Max :

4.1 mΩ

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

4.1mOhm

Input Capacitance :

5.2nF