FDP8860

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Weight :

1.8g

Current Rating :

80A

Turn-Off Delay Time :

64 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

30V

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 80A, 10V

Height :

9.4mm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rise Time :

135ns

Number of Pins :

3

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Threshold Voltage :

1.6V

Resistance :

2.5MOhm

Pulsed Drain Current-Max (IDM) :

556A

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Power Dissipation-Max :

254W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn On Delay Time :

35 ns

Mount :

Through Hole

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.83mm

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

12240pF @ 15V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Length :

10.67mm

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Published :

2006

Fall Time (Typ) :

59 ns

Series :

PowerTrench®

FET Type :

N-Channel

Pbfree Code :

yes

Power Dissipation :

254W

Gate Charge (Qg) (Max) @ Vgs :

222nC @ 10V

Lead Free :

Lead Free

Vgs (Max) :

±20V