FDP8860

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Contact Plating :

Tin

Number of Terminations :

3

Transistor Application :

SWITCHING

Length :

10.67mm

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Rise Time :

135ns

Published :

2006

Resistance :

2.5MOhm

Input Capacitance (Ciss) (Max) @ Vds :

12240pF @ 15V

Continuous Drain Current (ID) :

80A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Series :

PowerTrench®

Current Rating :

80A

Gate Charge (Qg) (Max) @ Vgs :

222nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

254W Tc

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Threshold Voltage :

1.6V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

64 ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 80A, 10V

Weight :

1.8g

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

59 ns

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Width :

4.83mm

ECCN Code :

EAR99

Height :

9.4mm

Pulsed Drain Current-Max (IDM) :

556A

Power Dissipation :

254W

Turn On Delay Time :

35 ns