FDP86363-F085

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 80A, 10V

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

512 mJ

Drain-source On Resistance-Max :

0.0028Ohm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

80V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 40V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Surface Mount :

No

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

80V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Series :

Automotive, AEC-Q101, PowerTrench®

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

110A

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

FET Type :

N-Channel