FDP6670AL

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Mfr.Part #
FDP6670AL
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 80A TO220-3
Stock
44,482
In Stock :
44,482

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
3V @ 250µA
Packaging :
Tube
Operating Temperature :
-65°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
80A Ta
Pulsed Drain Current-Max (IDM) :
240A
JESD-609 Code :
e3
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Avalanche Energy Rating (Eas) :
114 mJ
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 40A, 10V
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2.44pF @ 15V
Qualification Status :
COMMERCIAL
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Finish :
MATTE TIN
DS Breakdown Voltage-Min :
30V
Drain Current-Max (Abs) (ID) :
80A
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
68W Tc
Pbfree Code :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Additional Feature :
LOGIC LEVEL COMPATIBLE
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 5V
Reach Compliance Code :
Unknown
Terminal Position :
Single
Series :
PowerTrench®
Transistor Element Material :
SILICON
Number of Elements :
1
Pin Count :
3
Peak Reflow Temperature (Cel) :
Not Applicable
Drain-source On Resistance-Max :
0.0065ohm
FET Type :
N-Channel
Datasheets
FDP6670AL
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP6670AL from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~175°C TJ, Package / Case:TO-220-3, Number of Terminations:3, FDP6670AL pinout, FDP6670AL datasheet PDF, FDP6670AL amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP6670AL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP6670AL


N-Channel Tube 6.5m Ω @ 40A, 10V ±20V 2.44pF @ 15V 33nC @ 5V 30V TO-220-3

FDP6670AL Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 114 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.44pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDP6670AL Features


the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)


FDP6670AL Applications


There are a lot of Rochester Electronics, LLC
FDP6670AL applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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