FDP6670AL
- Mfr.Part #
- FDP6670AL
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO220-3
- Stock
- 44,482
- In Stock :
- 44,482
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Packaging :
- Tube
- Operating Temperature :
- -65°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 80A Ta
- Pulsed Drain Current-Max (IDM) :
- 240A
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Avalanche Energy Rating (Eas) :
- 114 mJ
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 40A, 10V
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.44pF @ 15V
- Qualification Status :
- COMMERCIAL
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- DS Breakdown Voltage-Min :
- 30V
- Drain Current-Max (Abs) (ID) :
- 80A
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 68W Tc
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain-source On Resistance-Max :
- 0.0065ohm
- FET Type :
- N-Channel
- Datasheets
- FDP6670AL

N-Channel Tube 6.5m Ω @ 40A, 10V ±20V 2.44pF @ 15V 33nC @ 5V 30V TO-220-3
FDP6670AL Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 114 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.44pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDP6670AL Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDP6670AL Applications
There are a lot of Rochester Electronics, LLC
FDP6670AL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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