FDP61N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.67mm

Factory Lead Time :

7 Weeks

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Additional Feature :

FAST SWITCHING

JESD-609 Code :

e3

Voltage - Rated DC :

200V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Published :

2013

Power Dissipation-Max :

417W Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3380pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Continuous Drain Current (ID) :

6.1A

RoHS Status :

ROHS3 Compliant

Voltage :

200V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

41m Ω @ 30.5A, 10V

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Width :

4.83mm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Threshold Voltage :

5V

Rise Time :

215ns

FET Type :

N-Channel

Current :

61A

REACH SVHC :

No SVHC

Turn-Off Delay Time :

125 ns

Series :

UniFET™

Pbfree Code :

yes

Contact Plating :

Tin

Turn On Delay Time :

40 ns

Radiation Hardening :

No

Package / Case :

TO-220-3

Power Dissipation :

417W

Lead Free :

Lead Free

Height :

9.4mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

4.535924g

Resistance :

41mOhm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

3

Mounting Type :

Through Hole

Fall Time (Typ) :

170 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Current Rating :

61A

Element Configuration :

Single