FDP65N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

52 ns

Turn On Delay Time :

24 ns

Pulsed Drain Current-Max (IDM) :

260A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

135W

Turn-Off Delay Time :

98 ns

Published :

2013

Series :

UniFET™

Packaging :

Tube

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Elements :

1

Number of Terminations :

3

Power Dissipation-Max :

135W Tc

Length :

10.67mm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

65A

Package / Case :

TO-220-3

Rise Time :

94ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 25V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Weight :

1.8g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

16.51mm

Drain to Source Breakdown Voltage :

60V

Voltage - Rated DC :

60V

Width :

4.83mm

Nominal Vgs :

2 V

JESD-609 Code :

e3

Element Configuration :

Single

Mount :

Through Hole

Current Rating :

65A

Rds On (Max) @ Id, Vgs :

16m Ω @ 32.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified