FDP6030L

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Mfr.Part #
FDP6030L
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 48A TO220-3
Stock
102,660
In Stock :
102,660

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
1.25pF @ 15V
Surface Mount :
No
Reach Compliance Code :
Unknown
JEDEC-95 Code :
TO-220AB
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 5V
Terminal Position :
Single
Series :
PowerTrench®
Pulsed Drain Current-Max (IDM) :
150A
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
48A Ta
Operating Temperature :
-65°C~175°C TJ
Number of Terminations :
3
DS Breakdown Voltage-Min :
30V
Avalanche Energy Rating (Eas) :
180 mJ
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
30V
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain-source On Resistance-Max :
0.013Ohm
Drain Current-Max (Abs) (ID) :
52A
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
Not Applicable
Terminal Finish :
MATTE TIN
Power Dissipation-Max :
52W Tc
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Rds On (Max) @ Id, Vgs :
13m Ω @ 26A, 10V
Packaging :
Tube
Qualification Status :
COMMERCIAL
JESD-609 Code :
e3
Package / Case :
TO-220-3
Datasheets
FDP6030L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP6030L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, FDP6030L pinout, FDP6030L datasheet PDF, FDP6030L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP6030L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP6030L


N-Channel Tube 13m Ω @ 26A, 10V ±20V 1.25pF @ 15V 18nC @ 5V 30V TO-220-3

FDP6030L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 180 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.25pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 52A.Peak drain current is 150A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

FDP6030L Features


the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 150A.
a 30V drain to source voltage (Vdss)


FDP6030L Applications


There are a lot of Rochester Electronics, LLC
FDP6030L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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