FDP6030BL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

8 ns

Rds On (Max) @ Id, Vgs :

18m Ω @ 20A, 10V

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Application :

SWITCHING

Turn On Delay Time :

9 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

10 Weeks

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 15V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Operating Temperature :

-65°C~175°C TJ

Rise Time :

11ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

40A

Height :

9.4mm

Width :

4.83mm

Voltage - Rated DC :

30V

Resistance :

18mOhm

Published :

2000

Series :

PowerTrench®

Current Rating :

40A

Length :

10.67mm

Turn-Off Delay Time :

23 ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Number of Terminations :

3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation-Max :

60W Tc

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Weight :

1.8g

Power Dissipation :

60W