FDP39N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rise Time :

160ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

860 mJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Additional Feature :

FAST SWITCHING

Vgs (Max) :

±30V

FET Type :

N-Channel

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

Weight :

1.8g

Fall Time (Typ) :

150 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

251W Tc

Mounting Type :

Through Hole

Turn On Delay Time :

30 ns

Rds On (Max) @ Id, Vgs :

66m Ω @ 19.5A, 10V

Turn-Off Delay Time :

150 ns

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

251W

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

0.066Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Series :

UniFET™

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Continuous Drain Current (ID) :

39A

Packaging :

Tube

Pbfree Code :

yes

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

39A Tc