FDP39N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Power Dissipation :

251W

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Power Dissipation-Max :

251W Tc

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

66m Ω @ 19.5A, 10V

Continuous Drain Current (ID) :

39A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 25V

Weight :

1.8g

Turn-Off Delay Time :

150 ns

Turn On Delay Time :

30 ns

Drain-source On Resistance-Max :

0.066Ohm

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Rise Time :

160ns

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

860 mJ

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Number of Elements :

1

Additional Feature :

FAST SWITCHING

Series :

UniFET™

ECCN Code :

EAR99

Package / Case :

TO-220-3

Fall Time (Typ) :

150 ns