FDP39N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

66m Ω @ 19.5A, 10V

Number of Elements :

1

Turn On Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pbfree Code :

yes

Vgs (Max) :

±30V

Rise Time :

160ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

FET Type :

N-Channel

Package / Case :

TO-220-3

Packaging :

Tube

Series :

UniFET™

Power Dissipation-Max :

251W Tc

Drain to Source Breakdown Voltage :

200V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Additional Feature :

FAST SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Fall Time (Typ) :

150 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

39A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

39A Tc

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

860 mJ

Drain-source On Resistance-Max :

0.066Ohm

Turn-Off Delay Time :

150 ns

ECCN Code :

EAR99

Power Dissipation :

251W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)