FDP3652
- Mfr.Part #
- FDP3652
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 9
- Stock
- 1,968
- In Stock :
- 1,968
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.83mm
- Element Configuration :
- Single
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 9A
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 61A, 10V
- Turn-Off Delay Time :
- 26 ns
- Number of Terminations :
- 3
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 4V
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2880pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 61A Tc
- Continuous Drain Current (ID) :
- 61A
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Packaging :
- Bulk
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Weight :
- 1.8g
- Current Rating :
- 61A
- Case Connection :
- DRAIN
- Resistance :
- 16mOhm
- Radiation Hardening :
- No
- Power Dissipation :
- 150W
- Height :
- 9.4mm
- Published :
- 2003
- Turn On Delay Time :
- 12 ns
- Power Dissipation-Max :
- 150W Tc
- Length :
- 10.67mm
- Transistor Element Material :
- SILICON
- Rise Time :
- 85ns
- Fall Time (Typ) :
- 45 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Datasheets
- FDP3652

N-Channel Bulk 16m Ω @ 61A, 10V ±20V 2880pF @ 25V 53nC @ 10V TO-220-3
FDP3652 Description
The ON Semiconductor FDP3652 MOSFET is a 100 V, 61 A, 16 mΩ N-Channel PowerTrench MOSFET.
FDP3652 Features
-
rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A
-
Qg(tot) = 41nC (Typ.), VGS = 10V
-
Low Miller Charge
-
Low Qrr Body Diode
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDP3652 Applications
-
Synchronous Rectification for ATX 1 Server 1 Telecom PSU
-
Battery Protection Circuit
-
Motor drives and Uninterruptible Power Supplies
-
Micro Solar Inverter
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