FDP33N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Number of Terminations :

3

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2135pF @ 25V

Pbfree Code :

yes

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

250V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Series :

UniFET™

Published :

2004

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Rise Time :

230ns

Factory Lead Time :

6 Weeks

Power Dissipation-Max :

235W Tc

Element Configuration :

Single

Turn-Off Delay Time :

75 ns

Lead Free :

Lead Free

Height :

9.4mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Width :

4.83mm

FET Type :

N-Channel

Package / Case :

TO-220-3

Resistance :

94mOhm

Power Dissipation :

235W

Turn On Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

250V

Number of Elements :

1

Continuous Drain Current (ID) :

33A

Length :

10.67mm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Current Rating :

33A

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Weight :

1.8g

Fall Time (Typ) :

120 ns

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole