FDP33N25
- Mfr.Part #
- FDP33N25
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 33A TO220-3
- Stock
- 8,192
- In Stock :
- 8,192
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 120 ns
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Published :
- 2004
- Threshold Voltage :
- 5V
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Weight :
- 1.8g
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Width :
- 4.83mm
- Drain to Source Breakdown Voltage :
- 250V
- Voltage - Rated DC :
- 250V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 33A
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Length :
- 10.67mm
- Number of Pins :
- 3
- Current Rating :
- 33A
- Power Dissipation-Max :
- 235W Tc
- Number of Elements :
- 1
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 94m Ω @ 16.5A, 10V
- Power Dissipation :
- 235W
- Series :
- UniFET™
- Element Configuration :
- Single
- Turn On Delay Time :
- 35 ns
- Resistance :
- 94mOhm
- Rise Time :
- 230ns
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2135pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Application :
- SWITCHING
- Height :
- 9.4mm
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 75 ns
- ECCN Code :
- EAR99
- Datasheets
- FDP33N25

N-Channel Tube 94m Ω @ 16.5A, 10V ±30V 2135pF @ 25V 48nC @ 10V TO-220-3
FDP33N25 Description
N-channel UniFET? MOSFET FDP33N25 belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, better switching performance, and higher avalanche energy strength. Due to its reliable performance, it is able to provide considerable benefits for switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDP33N25 Features
-
Lower on-state resistance
-
Better switching performance
-
Higher avalanche energy strength
-
Improved dv/dt capability
-
Available in the TO-220 package
FDP33N25 Applications
-
Lighting
-
AC-DC power supply
-
Uninterruptible power supply
-
ATX and electronic lamp ballasts
-
Power factor correction (PFC)
-
Flat-panel display (FPD) TV power
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