FDP3632
- Mfr.Part #
- FDP3632
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 923
- In Stock :
- 923
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 46 ns
- Resistance :
- 9mOhm
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 310W
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Power Dissipation-Max :
- 310W Tc
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 96 ns
- Current Rating :
- 44A
- Turn On Delay Time :
- 30 ns
- Weight :
- 1.8g
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.67mm
- Contact Plating :
- Tin
- Height :
- 9.4mm
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- Rise Time :
- 39ns
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 80A Tc
- JESD-609 Code :
- e3
- Width :
- 4.83mm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- FDP3632

N-Channel Tube 9m Ω @ 80A, 10V ±20V 6000pF @ 25V 110nC @ 10V TO-220-3
Description
The FDP3632 is a POWERTRENCH MOSFET with N-Channel. ON Semi manufactures a wide range of MOSFET devices, including both high-voltage (>250V) and low-voltage (250V) versions. Smaller die sizes are possible thanks to modern silicon technology, which is used in a variety of industry-standard and thermally enhanced packaging.
Reduced voltage spikes and overshoot, lower junction capacitance and reverse recovery charge, and the elimination of unnecessary external components all contribute to ON Semi MOSFETs' higher design reliability.
Features
? Low Qrr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? These Devices are Pb?Free and are RoHS Compliant
? RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A
? Qg (tot) = 84 nC (Typ.), VGS = 10 V
? Low Miller Charge
Applications
? Synchronous Rectification
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
? Micro Solar Inverter
? Circuit
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