FDP3632
- Mfr.Part #
- FDP3632
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 923
- In Stock :
- 923
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Height :
- 9.4mm
- Width :
- 4.83mm
- Rise Time :
- 39ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 80A
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Resistance :
- 9mOhm
- Threshold Voltage :
- 4V
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 80A, 10V
- Series :
- PowerTrench®
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 80A Tc
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Power Dissipation :
- 310W
- Weight :
- 1.8g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 310W Tc
- Factory Lead Time :
- 4 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 100V
- Fall Time (Typ) :
- 46 ns
- Mount :
- Through Hole
- Length :
- 10.67mm
- Turn On Delay Time :
- 30 ns
- Turn-Off Delay Time :
- 96 ns
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Current Rating :
- 44A
- Datasheets
- FDP3632
FDP3632 Documents

N-Channel Tube 9m Ω @ 80A, 10V ±20V 6000pF @ 25V 110nC @ 10V TO-220-3
Description
The FDP3632 is a POWERTRENCH MOSFET with N-Channel. ON Semi manufactures a wide range of MOSFET devices, including both high-voltage (>250V) and low-voltage (250V) versions. Smaller die sizes are possible thanks to modern silicon technology, which is used in a variety of industry-standard and thermally enhanced packaging.
Reduced voltage spikes and overshoot, lower junction capacitance and reverse recovery charge, and the elimination of unnecessary external components all contribute to ON Semi MOSFETs' higher design reliability.
Features
? Low Qrr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? These Devices are Pb?Free and are RoHS Compliant
? RDS(ON) = 7.5 m (Typ.), VGS = 10 V, ID = 80 A
? Qg (tot) = 84 nC (Typ.), VGS = 10 V
? Low Miller Charge
Applications
? Synchronous Rectification
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
? Micro Solar Inverter
? Circuit
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