FDP3672
- Mfr.Part #
- FDP3672
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 105V 5.9A/41A TO220
- Stock
- 15,805
- In Stock :
- 15,805
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 12 ns
- Width :
- 4.83mm
- Continuous Drain Current (ID) :
- 41A
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 48 mJ
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 41A
- Height :
- 9.4mm
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Resistance :
- 33mOhm
- Drain to Source Breakdown Voltage :
- 105V
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 24 ns
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 105V
- Published :
- 2003
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 41A, 10V
- Drain Current-Max (Abs) (ID) :
- 5.9A
- Series :
- PowerTrench®
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 9 Weeks
- Case Connection :
- DRAIN
- Power Dissipation :
- 135W
- Rise Time :
- 48ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 135W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 5.9A Ta 41A Tc
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 27 ns
- Length :
- 10.67mm
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 1.8g
- Datasheets
- FDP3672

N-Channel Tube 33m Ω @ 41A, 10V ±20V 1670pF @ 25V 37nC @ 10V TO-220-3
FDP3672 Description
FDP3672 MOSFET has much superior body diode reverse recovery performance. FDP3672 ON Semiconductor can remove additional component. FDP3672 datasheet is suitable for Consumer Appliances, Synchronous Rectification, Motor Drives, Battery Protection Circuit, as well as Micro Solar Inverters.
FDP42AN15A0 Features
Optimized Efficiency at High Frequencies
Low Miller Charge
RDS(on) = 25m? (Typ.) @ VGS = 10V, ID = 41A
Low Qrr Body Diode
QG(tot) = 28nC (Typ.) @ VGS = 10V
FDP42AN15A0 Applications
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
Motor Drives
Uninterruptible Power Supplies
Micro Solar Inverters
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