FDP3672
- Mfr.Part #
- FDP3672
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 105V 5.9A/41A TO220
- Stock
- 15,805
- In Stock :
- 15,805
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.83mm
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 105V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3
- Length :
- 10.67mm
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 48ns
- Power Dissipation-Max :
- 135W Tc
- Case Connection :
- DRAIN
- Published :
- 2003
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 105V
- Avalanche Energy Rating (Eas) :
- 48 mJ
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 41A, 10V
- Power Dissipation :
- 135W
- Factory Lead Time :
- 9 Weeks
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 41A
- Fall Time (Typ) :
- 27 ns
- Number of Terminations :
- 3
- Current Rating :
- 41A
- Weight :
- 1.8g
- FET Type :
- N-Channel
- Resistance :
- 33mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 5.9A Ta 41A Tc
- Height :
- 9.4mm
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 24 ns
- Turn On Delay Time :
- 12 ns
- Drain Current-Max (Abs) (ID) :
- 5.9A
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- FDP3672
FDP3672 Documents

N-Channel Tube 33m Ω @ 41A, 10V ±20V 1670pF @ 25V 37nC @ 10V TO-220-3
FDP3672 Description
FDP3672 MOSFET has much superior body diode reverse recovery performance. FDP3672 ON Semiconductor can remove additional component. FDP3672 datasheet is suitable for Consumer Appliances, Synchronous Rectification, Motor Drives, Battery Protection Circuit, as well as Micro Solar Inverters.
FDP42AN15A0 Features
Optimized Efficiency at High Frequencies
Low Miller Charge
RDS(on) = 25m? (Typ.) @ VGS = 10V, ID = 41A
Low Qrr Body Diode
QG(tot) = 28nC (Typ.) @ VGS = 10V
FDP42AN15A0 Applications
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
Motor Drives
Uninterruptible Power Supplies
Micro Solar Inverters
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