FDP3672
- Mfr.Part #
- FDP3672
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 105V 5.9A/41A TO220
- Stock
- 15,805
- In Stock :
- 15,805
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Rise Time :
- 48ns
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 5.9A Ta 41A Tc
- Avalanche Energy Rating (Eas) :
- 48 mJ
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- Resistance :
- 33mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 24 ns
- Length :
- 10.67mm
- Power Dissipation :
- 135W
- Power Dissipation-Max :
- 135W Tc
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 105V
- Factory Lead Time :
- 9 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Weight :
- 1.8g
- Current Rating :
- 41A
- Continuous Drain Current (ID) :
- 41A
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 41A, 10V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 5.9A
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 105V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2003
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- FET Type :
- N-Channel
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 9.4mm
- Fall Time (Typ) :
- 27 ns
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Width :
- 4.83mm
- ECCN Code :
- EAR99
- Datasheets
- FDP3672
FDP3672 Documents

N-Channel Tube 33m Ω @ 41A, 10V ±20V 1670pF @ 25V 37nC @ 10V TO-220-3
FDP3672 Description
FDP3672 MOSFET has much superior body diode reverse recovery performance. FDP3672 ON Semiconductor can remove additional component. FDP3672 datasheet is suitable for Consumer Appliances, Synchronous Rectification, Motor Drives, Battery Protection Circuit, as well as Micro Solar Inverters.
FDP42AN15A0 Features
Optimized Efficiency at High Frequencies
Low Miller Charge
RDS(on) = 25m? (Typ.) @ VGS = 10V, ID = 41A
Low Qrr Body Diode
QG(tot) = 28nC (Typ.) @ VGS = 10V
FDP42AN15A0 Applications
Consumer Appliances
Synchronous Rectification
Battery Protection Circuit
Motor Drives
Uninterruptible Power Supplies
Micro Solar Inverters
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