FDP19N40
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- Mfr.Part #
- FDP19N40
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 19A TO220-3
- Stock
- 1,243
- In Stock ：
- 1,243
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 19A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Fall Time (Typ) :
- 49 ns
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 9.5A, 10V
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 542 mJ
- Drain to Source Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 5 Weeks
- Pulsed Drain Current-Max (IDM) :
- 76A
- Series :
- UniFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Weight :
- 1.8g
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2115pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Rise Time :
- 70ns
- Published :
- 2013
- Packaging :
- Tube
- Turn-Off Delay Time :
- 82 ns
- Package / Case :
- TO-220-3
- Turn On Delay Time :
- 31 ns
- Mounting Type :
- Through Hole
- Resistance :
- 240mOhm
- Power Dissipation-Max :
- 215W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Power Dissipation :
- 215W
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDP19N40
N-Channel Tube 240m Ω @ 9.5A, 10V ±30V 2115pF @ 25V 40nC @ 10V TO-220-3
FDP19N40 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 542 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2115pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 82 ns.Peak drain current is 76A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDP19N40 Features
the avalanche energy rating (Eas) is 542 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 76A.
FDP19N40 Applications
There are a lot of ON Semiconductor
FDP19N40 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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