FDP10N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Threshold Voltage :

3V

Length :

10.36mm

Element Configuration :

Single

Width :

4.9mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Weight :

1.8g

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Rise Time :

50ns

Power Dissipation :

185W

Turn On Delay Time :

25 ns

Pbfree Code :

yes

Turn-Off Delay Time :

70 ns

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1475pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

50 ns

Pulsed Drain Current-Max (IDM) :

40A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

550 mJ

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Height :

16.07mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mount :

Through Hole

Series :

UniFET-II™

Operating Temperature :

-55°C~150°C TJ

Published :

2010

Factory Lead Time :

5 Weeks

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Power Dissipation-Max :

185W Tc

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.75Ohm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

750m Ω @ 5A, 10V

Continuous Drain Current (ID) :

10A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Pins :

3