FDP120N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2004

Power Dissipation-Max :

170W Tc

Pulsed Drain Current-Max (IDM) :

296A

Mounting Type :

Through Hole

Rise Time :

105ns

Package / Case :

TO-220-3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Width :

4.83mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

15 ns

Length :

10.67mm

Series :

PowerTrench®

Radiation Hardening :

No

Resistance :

12mOhm

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

27 ns

Height :

16.51mm

Turn-Off Delay Time :

39 ns

Element Configuration :

Single

Weight :

1.8g

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

74A

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

5605pF @ 25V

Number of Pins :

3

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

12m Ω @ 74A, 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

170W

ECCN Code :

EAR99

Threshold Voltage :

2.5V

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

JESD-609 Code :

e3