FDP12N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Radiation Hardening :

No

Weight :

1.8g

Fall Time (Typ) :

30 ns

ECCN Code :

EAR99

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Vgs (Max) :

±30V

Power Dissipation-Max :

165W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Continuous Drain Current (ID) :

11.5A

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

9 Weeks

Mount :

Through Hole

Series :

UniFET™

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

46A

Turn-Off Delay Time :

45 ns

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Drain to Source Breakdown Voltage :

500V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Power Dissipation :

165W

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Turn On Delay Time :

24 ns

Gate to Source Voltage (Vgs) :

30V

Resistance :

650mOhm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 25V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Published :

2013

Rise Time :

50ns

JESD-609 Code :

e3

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

456 mJ

Pbfree Code :

yes